About Diodes Incorporated
來源:http://taiheth.com 作者:泰河盛電子 2023年08月11
Diodes 公司 (Nasdaq:DIOD) 是標準普爾小型股 600 指數(shù)和羅素 3000 指數(shù)成員公司,為高質(zhì)量應(yīng)用特定標準產(chǎn)品全球制造商與供貨商,產(chǎn)品涵蓋廣泛領(lǐng)域,包括分立、邏輯、模擬及混合訊號半導(dǎo)體市場。Diodes 亦為汽車、工業(yè)、運算、消費性電子及通訊等市場提供服務(wù)。
Diodes 的產(chǎn)品包括二極管、整流器、晶體管、MOSFET、GPP橋、GPP整流器、保護裝置、特定功能數(shù)組、單閘極邏輯、放大器與比較器、霍爾效應(yīng)與溫度傳感器、電源管理設(shè)備,包括AC-DC 轉(zhuǎn)換器與控制器、DC-DC 開關(guān)與線性穩(wěn)壓器,以及電壓參考與LED驅(qū)動器;以及特殊功能裝置,例如 USB 電源開關(guān)、負載開關(guān)、電壓監(jiān)控器及馬達控制器。Diodes 亦提供高速信號的定時、連接、開關(guān)與信號完整性解決方案。
Diodes 公司總部及美洲銷售辦公室位于美國德州普拉諾 (Plano) 與加州米爾皮塔斯 (Milpitas)。設(shè)計、營銷與工程中心位于普拉諾、米爾皮塔斯、臺北、桃園、竹北、上海、揚州、英國奧爾德姆及德國紐豪斯 。Diodes 的晶圓生產(chǎn)設(shè)施位于美國緬因州南波特蘭;英國格林諾克奧爾德姆;中國上海和無錫;還有基隆和新竹。Diodes晶振 在中國上海、濟南、成都、無錫、中壢和基隆以及德國紐豪斯設(shè)有組裝與測試設(shè)施。另外在多個據(jù)點設(shè)有工程、銷售、倉儲及物流辦公室,包括臺北、香港、上海、深圳、武漢、揚州;英國奧爾德姆;南韓城南市以及德國慕尼黑、法蘭克福,并于世界各地設(shè)有支持辦公室。
公司生產(chǎn)設(shè)施已通過國際公認標準ISO-9001:2015、ISO 14001:2015和IATF16949:2016的品質(zhì)認證。
Diodes 公司目前擁有 C-TPAT 認證。
上述質(zhì)量獎反映 Diodes 公司優(yōu)異的品管技術(shù),并進一步提升我們在重視質(zhì)量與一致性的 OEM 業(yè)者心目中極佳廠商的地位。
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's Smallcap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes serves the automotive, industrial, computing, consumer electronics, and communications markets.
Our diverse product portfolio covers diodes; rectifiers; transistors; MOSFETs; SiC diodes and MOSFETs; protection devices; logic; voltage translators; amplifiers and comparators; sensors; and power management devices such as AC-DC converters, DC-DC switching, linear voltage regulators, voltage references, LED drivers, power switches, and voltage supervisors. We also have timing and connectivity solutions including clock ICs, crystal oscillators, PCIe packet switches, multi-protocol switches, interface products, and signal integrity solutions for high-speed signals.
Diodes’ corporate headquarters and Americas’ sales offices are located in Plano, Texas, and Milpitas, California. Design, marketing, and engineering centers are located in Plano, Milpitas, U.S.; Taipei, Taoyuan City, Zhubei City, Taiwan; Shanghai, Yangzhou, China; Oldham, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in South Portland, Maine, U.S., Oldham, Greenock, UK; Shanghai and Wuxi, China; and Keelung and Hsinchu, Taiwan. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Wuxi, China; Neuhaus, Germany; and Jhongli and Keelung, Taiwan. Additional engineering, sales, warehouse, and logistics offices are located in Taipei, Taiwan; Hong Kong; Oldham, UK; Shanghai, Shenzhen, Wuhan, and Yangzhou, China; Seongnam-si, South Korea; and Munich, Frankfurt, Germany; with support offices throughout the world.
The company’s manufacturing facilities have achieved certifications in the internationally recognized standards of ISO 9001:2015, ISO 14001:2015, and, for automotive products, IATF 16949:2016.
Diodes Incorporated is also C-TPAT certified.高端晶體
These Quality Awards reflect the superior quality-control techniques established at Diodes Incorporated and further enhance our credibility as a vendor-of-choice to OEMs increasingly concerned with quality and consistency.
DIODES原廠代碼 | 生產(chǎn)商品牌 | 型號 | 類型 | 頻率 | 輸出 | 電壓 | 頻率穩(wěn)定度 | 工作溫度 |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | LVCMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FDC500026 | Diodes晶振 | FD | XO | 125MHz | LVCMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2450017 | Diodes晶振 | FD | XO | 24.576MHz | LVCMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD2500050 | Diodes晶振 | FD | XO | 25MHz | CMOS | 2.5V | ±50ppm | -20°C ~ 70°C |
FD2500050 | Diodes晶振 | FD | XO | 25MHz | LVCMOS | 2.5V | ±50ppm | -20°C ~ 70°C |
FD6250012 | Diodes晶振 | FD | XO | 62.5MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD0100003 | Diodes晶振 | FD | XO | 1MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0180008 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0180009 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0180010 | Diodes晶振 | FD | XO | 1.8432MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0200013 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0200014 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0200015 | Diodes晶振 | FD | XO | 2.048MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0350006 | Diodes晶振 | FD | XO | 3.579545MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0360017 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0360018 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0360019 | Diodes晶振 | FD | XO | 3.6864MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0400021 | Diodes晶振 | FD | XO | 4MHz | CMOS | 2.5V | ±25ppm | -20°C ~ 70°C |
FD0500003 | Diodes晶振 | FD | XO | 5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0600006 | Diodes晶振 | FD | XO | 6MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0610002 | Diodes晶振 | FD | XO | 6.144MHz | CMOS | 3.3V | ±20ppm | -20°C ~ 70°C |
FD0730013 | Diodes晶振 | FD | XO | 7.3728MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0800013 | Diodes晶振 | FD | XO | 8MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0810003 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD0810004 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD0810005 | Diodes晶振 | FD | XO | 8.192MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD0820001 | Diodes晶振 | FD | XO | 8.25MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1000015 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1000016 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1000017 | Diodes晶振 | FD | XO | 10MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1100008 | Diodes晶振 | FD | XO | 11.0592MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1120009 | Diodes晶振 | FD | XO | 11.2896MHz | CMOS | 1.8V | ±50ppm | -20°C ~ 70°C |
FD1200028 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1200029 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1200030 | Diodes晶振 | FD | XO | 12MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1220014 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1220015 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1220016 | Diodes晶振 | FD | XO | 12.288MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1350007 | Diodes晶振 | FD | XO | 13.5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1430016 | Diodes晶振 | FD | XO | 14.3181MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1430018 | Diodes晶振 | FD | XO | 14.3181MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1470015 | Diodes晶振 | FD | XO | 14.7456MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1470017 | Diodes晶振 | FD | XO | 14.7456MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1600015 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1600016 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1600017 | Diodes晶振 | FD | XO | 16MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1630009 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1630010 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
FD1630011 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1630012 | Diodes晶振 | FD | XO | 16.384MHz | CMOS | 2.5V | ±50ppm | -40°C ~ 85°C |
FD1650001 | Diodes晶振 | FD | XO | 16.5MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1800003 | Diodes晶振 | FD | XO | 18MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
FD1840014 | Diodes晶振 | FD | XO | 18.432MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
FD1940001 | Diodes晶振 | FD | XO | 19.44MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
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